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朝岡 秀人; 魚住 雄輝
Thin Solid Films, 591(Part B), p.200 - 203, 2015/09
Siなど半導体最表面は、表面ダングリングボンドの数を減少させるように独自の再構成構造を示すことから、バルクとは異なる独自のストレスが存在すると考えられてきた。我々はSi(111)77再構成表面に水素終端処理を施すことによって11バルク構造を作製し、最表面構造の違いによるストレスの実測を試みた。その結果、これまで理論計算でのみ得られていたSi(111)77再構成構造に存在する引張応力を実測することに成功し、成長形態と密接な関係がある表面ストレスの評価を可能とした。
Tang, J.*; 小川 修一*; 吉越 章隆; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*
no journal, ,
The oxidation kinetics at an SiO/Si(111) interface was monitored by O 1s and Si 2p photoelectron spectroscopy using synchrotron radiation to clarify the oxygen pressure dependence of oxidation rate. The initial oxygen uptake at the O pressure of 4.610 Pa and the substrate temperature of 500C slowed down at about 0.4 nm, suggesting that the surface is covered with oxides. When the oxygen pressure was increased from 4.610 Pa after saturation, the oxidation rate showed the increase depending on oxygen pressure difference. In addition to Si, Si, Si, and Si components, Si and Si components, which are associated with the interface strain, were examined carefully. To explain the observed correlation between the oxidation induced strain and the oxidation rate comprehensively, the vacancy and the emitted Si atoms from the interface are taken into account as oxygen adsorption sites.